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notes through are on page 8 www.irf.com 1 IRFP4710PBF hexfet power mosfet v dss r ds(on) max i d 100v 0.014 ? 72a pd - 95055 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 72 i d @ t c = 100c continuous drain current, v gs @ 10v 51 a i dm pulsed drain current 300 p d @t c = 25c power dissipation 190 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 8.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings high frequency dc-dc converters motor control uninterruptible power supplies benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.81 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 to-247ac lead-free
IRFP4710PBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 35 ??? ??? s v ds = 50v, i d = 45a q g total gate charge ??? 110 170 i d = 45a q gs gate-to-source charge ??? 43 ??? nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 40 ??? v gs = 10v, t d(on) turn-on delay time ??? 35 ??? v dd = 50v t r rise time ??? 130 ??? i d = 45a t d(off) turn-off delay time ??? 41 ??? r g = 4.5 ? t f fall time ??? 38 ??? v gs = 10v c iss input capacitance ??? 6160 ??? v gs = 0v c oss output capacitance ??? 440 ??? v ds = 25v c rss reverse transfer capacitance ??? 250 ??? pf ? = 1.0mhz c oss output capacitance ??? 1580 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 280 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 430 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 190 mj i ar avalanche current ??? 45 a e ar repetitive avalanche energy ??? 20 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curr ent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 45a, v gs = 0v t rr reverse recovery time ??? 74 110 ns t j = 25c, i f = 45a q rr reverse recoverycharge ??? 180 260 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 72 300 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.011 0.014 ? v gs = 10v, i d = 45a v gs(th) gate threshold voltage 3.5 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 1.0 a v ds = 95v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current
IRFP4710PBF www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.5v 7.0v 6.5v 6.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.5v 7.0v 6.5v 6.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 0.1 1 10 100 1000 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 75a
IRFP4710PBF 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 45a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFP4710PBF www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 t , case temperature ( c) i , drain current (a) c d
IRFP4710PBF 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 18a 32a 45a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
IRFP4710PBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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IRFP4710PBF 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/04 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 190h r g = 25 ? , i as = 45a, v gs = 10v. i sd 45a, di/dt 420a/s, v dd v (br)dss , t j 175c .
pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .

lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 123 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain lead assignments hexfet 1 - gate 2 - drain 3 - source 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector
example: as s e mb le d on ww 35, 2000 lot code 5657 with assembly t his is an irfpe30 in the as sembly line "h" 035h logo int ernational rect ifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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